New ferroelectric material sandwiched between GaN gates, makes the transistor switch faster and more efficient, through ...

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

Mastering the nuances of modern ac-dc power supply selection ...

iDEAL Semiconductor, a fabless power semiconductor company, has announced the signing of a global distribution agreement with ...

Also, weighing metal objects is problematic (due to their conductivity, they'll likely be detected as a finger press), so ...

Renesas launches the Gen IV Plus platform with three new high-voltage 650-V GaN FETs for AI data centers and server power ...

Recently, a research team led by Professor HUANG Xingjiu at the Institute of Solid-State Physics, the Hefei Institutes of ...

Weeks after the Helix Stadium was unveiled, we finally have a brief taste of what the new Agoura modeling tech is capable of ...

A pioneering review published in Nano-Micro Letters provides a thorough overview of the significance of two-dimensional (2D) ...

The Nothing Phone 3 features one of the boldest designs on any smartphone. While most phone makers go for symmetry in camera ...

The updated Class 12th Physics syllabus for the academic year 2025-26 has been released by the Rajasthan Board on its ...

In sub-Saharan Africa, agriculture is a fundamental component of many economies, with grain storage playing a large role in ...