New ferroelectric material sandwiched between GaN gates, makes the transistor switch faster and more efficient, through ...

Bengaluru: Scientists in Bengaluru's Centre for Nano and Soft Matter Sciences (CeNS) have developed a cost-effective version ...

A silicon-lithium niobate metasurface controls light through air at gigahertz speeds, advancing compact systems for optical ...

The global microphone market is projected to grow from USD 2.88 billion in 2025 to USD 3.98 billion by 2030, at a CAGR of 6.7 ...

We love a good controversy. One controversial theory in particular has the heads of scientists spinning. Some believe ...

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

Only a quick glance at some of the latest cybersecurity statistics is required to help draw attention to the ever-more urgent importance of this topic. The UK Government’s recently released 2025 Cyber ...

This latest triumph builds on previous successes by the Japanese company, which has shown that quartz-free HVPE can grow GaN layers with record room-temperature mobilities. Epilayers also feature very ...

Mastering the nuances of modern ac-dc power supply selection ...

Power semiconductor makers are developing innovative 650-V GaN FETs that deliver big advantages in EV charger designs.

Recently, a research team led by Professor HUANG Xingjiu at the Institute of Solid-State Physics, the Hefei Institutes of ...

Also, weighing metal objects is problematic (due to their conductivity, they'll likely be detected as a finger press), so ...