New ferroelectric material sandwiched between GaN gates, makes the transistor switch faster and more efficient, through ...

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

Breakthrough SuperQ technology marks the first major advance in silicon MOSFET architecture since the Superjunction over 25 years ago. BETHLEHEM, Pa., ...

According to Heinz Lichtenegger — Pro-Ject CEO and the man responsible for turning a tiny Austrian turntable company into the biggest name in audiophile vinyl playback — the B1xi represents a return ...

Also, weighing metal objects is problematic (due to their conductivity, they'll likely be detected as a finger press), so ...

This letter reports for the first time a full experimental study of performance boosting of tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the importance of ...

A research team led by Profs. Chen Deyong and Wang Junbo from the Aerospace Information Research Institute (AIR) of the ...

The SiC MOSFETs benefit from improvements to the component structure, based on the original double-trench design. Therefore, it achieves up to 40% lower on-resistance with notably higher robustness ...

Renesas launches the Gen IV Plus platform with three new high-voltage 650-V GaN FETs for AI data centers and server power ...

The updated Class 12th Physics syllabus for the academic year 2025-26 has been released by the Rajasthan Board on its ...

World-first: Terra Quantum builds the first foundry-grade NC-FET with standard CMOS materials. The NC-FET marks a defining moment ...

Scientists in China have developed a new strategy that could significantly improve the performance of chemical sensors used ...